Circuit for linearizing the power control profile of a BiCMOS power amplifier
US6518840B1 · kind B1 · utility
6Cited by
3References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 2, 2000 |
| Grant date | Feb 11, 2003 |
| Priority date | — |
| Expiry date | Feb 2, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2203/7236
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A two stage amplifier for a portable or cellular phone is disclosed which is manufactured using a fast BiCMOS process suach as SiGe. A shunt circuit controlled by a switch is provided between a base of one of the amplifying transistors and a DC terminal to prevent it from operating in a Class B mode of operation when it is intended for the amplifier to be switched off.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.