Method to manufacture magnetic tunneling elements using inductively coupled plasma
US6519123B1 · kind B1 · utility
19Cited by
4References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 9, 1999 |
| Grant date | Feb 11, 2003 |
| Priority date | — |
| Expiry date | Sep 9, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/3996
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A magnetic tunneling element in which the tunnel current flows reliably to exhibit a stable magnetic tunneling effect. The magnetic tunneling element includes a first magnetic layer, a tunnel barrier layer formed on the first magnetic layer, and a second magnetic layer formed on the tunnel barrier layer. The tunnel barrier layer is a metal film oxidized by inductively coupled oxygen plasma and a second magnetic layer is formed on the tunnel barrier layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.