Non-volatile memory device with plurality of threshold voltage distributions
US6519184B2 · kind B2 · utility
59Cited by
1References
19Claims
0Family size
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Key dates
| Filing date | Feb 26, 2002 |
| Grant date | Feb 11, 2003 |
| Priority date | — |
| Expiry date | Feb 26, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3468
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a verify operation after a write or erase to check whether a memory cell threshold voltage is contained in a predetermined threshold voltage distribution, verify voltage is changed in three stages or more in a direction to mitigate the decision condition. This prevents non-convergence of write and erase operation and can complete the write or erase in a short time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.