Photonic quantum ring laser diode
US6519271B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 14, 1998 |
| Grant date | Feb 11, 2003 |
| Priority date | — |
| Expiry date | Oct 14, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2027
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photonic quantum ring (PQR) laser diode with a plurality of laterally extending layers, one on top of another in an axial stack, comprises an active region sandwiched between an n type multi-layer distributed Bragg reflector (DBR) stack and a p type multi-layer DBR stack, wherein, along the circumference of said active region, 3 dimensional radiations are emitted with various wavelengths over a predetermined tuning range, as a function of slanted view angle with respect to the stack axis. The PQR laser shows an ultra-low threshold current of &mgr;A range, T½ dependence of the spectral peak shift and a square law behavior of threshold currents.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.