Semiconductor growth method
US6521042B1 · kind B1 · utility
3Cited by
8References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 21, 1996 |
| Grant date | Feb 18, 2003 |
| Priority date | — |
| Expiry date | Mar 24, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1008
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Molecular beam epitaxy (202) with growing layer thickness control (206) by feedback of mass spectrometer (204) signals based on a process model. Examples include III-V compound structures with multiple AlAs, InGaAs, and InAs layers as used in resonant tunneling diodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.