Method of forming polycrystalline diamond cutters having modified residual stresses
US6521174B1 · kind B1 · utility
22Cited by
25References
29Claims
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Key dates
| Filing date | Nov 21, 2000 |
| Grant date | Feb 18, 2003 |
| Priority date | — |
| Expiry date | Nov 21, 2020 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB22F2998/10
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
The residual stresses that are experienced in polycrystalline diamond cutters, which lead to cutter failure, can be effectively modified by selectively thinning the carbid substrate subsequent to a high-temperature, high-pressure (sinter) processing, by selectively varying the material constituents of the carbide substrate, by subjecting the PDC cutter to an annealing process during sintering, by subjecting the formed PDC cutter to a post-process stress relief anneal, or by a combination of those means.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.