Copper etching compositions and products derived therefrom
US6521328B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 5, 2000 |
| Grant date | Feb 18, 2003 |
| Priority date | — |
| Expiry date | Sep 5, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24917
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The present invention is a persulfate etchant composition especially useful for dissolving copper during fabrication of microelectronic packages. The etchant is characterized by its ability to selectively etch copper in the presence of nickel, nickel-phosphorous and noble metal alloys therefrom. Furthermore, no deleterious galvanic etching occurs in this etchant-substrate system so that substantially no undercutting of the copper occurs. The combination of high selectivity and no undercutting allows for a simplification of the microelectronic fabrication process and significant improvements in the design features of the microelectronic package, in particular higher density circuits. The persulfate etchant composition is stabilized with acid and phosphate salts to provide a process that is stable, fast acting, environmentally acceptable, has high capacity, and can be performed at room temperature. A preferred etchant composition is 230 gm/liter sodium persulfate, 3 volume % phosphoric acid and 0.058 molar sodium phosphate dibasic.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.