Manufacturing method for reflection type liquid crystal display
US6521474B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 12, 2001 |
| Grant date | Feb 18, 2003 |
| Priority date | — |
| Expiry date | Oct 12, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0231
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
On an insulating substrate, there are formed a first gate electrode, a gate insulating film, a semiconductor film, and an interlayer insulating film. Above the interlayer insulating film, a TFT is formed having a second gate electrode connected to the first gate electrode. Then, a photosensitive resin is formed over the entire surface of the extant layers. Subsequently, first exposure is applied using a first mask, and second exposure is then applied using a second mask with a larger amount of light than used for the first exposure. The second mask has an opening at a position corresponding to a source. Thereafter, the photosensitive resin film is developed thereby forming a contact hole and a concave.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.