Method for manufacturing a low-profile semiconductor device
US6521478B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 26, 2001 |
| Grant date | Feb 18, 2003 |
| Priority date | — |
| Expiry date | Jun 26, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/00014
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device includes the steps of preparing a semiconductor chip with a plurality of bonding pads and a plurality of conductive bumps on the bonding pads, preparing a substrate formed with a plurality of bump receiving holes and a plurality of conductive traces having contact portions adjacent to peripheries of the bump receiving holes, laying the substrate over the semiconductor chip such that the conductive bumps respectively extend through the bump receiving holes, and forming a plurality of conductive bodies, each of which encloses and electrically connects a top portion of a respective one of the conductive bumps to the contact portion of a respective one of the conductive traces.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.