Manufacturing method for a semiconductor device
US6521482B1 · kind B1 · utility
25Cited by
3References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 3, 2000 |
| Grant date | Feb 18, 2003 |
| Priority date | — |
| Expiry date | Aug 3, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing individual semiconductor devices by forming island sections 26 on the surface of a common substrate 21, forming electrodes 27 and 28 one on either side of each island section 26, die bonding a semiconductor chip 29 to each island section 26, and wire bonding the electrodes 27 and 28 to the semiconductor chip 29. A single common cover 36 is fixed over the entire surface of the common substrate 21 to form a hermetically sealed hollow space over each chip mounting section 41. The cover 36 and substrate 21 are separated at each mounting section 41 to form individual semiconductor devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.