Method of manufacturing a field effect transistor
US6521497B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 9, 2001 |
| Grant date | Feb 18, 2003 |
| Priority date | — |
| Expiry date | May 9, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
Abstract
A method of manufacturing a trenched field effect transistor that includes a heavy body structure. The method includes forming a plurality of trenches into a semiconductor substrate having dopants of a first conductivity type, wherein the gate electrode of the transistor is formed. A doped well having dopants of a second conductivity type is formed into the substrate and between the trenches. Source regions having dopants of the first conductivity type are formed inside the doped well adjacent to and on opposite sides of the trenches. A heavy body region having dopants of the second conductivity type is formed inside each doped well and at a depth that is shallower than the doped well. The heavy body is formed in a manner that makes an abrupt junction between the heavy body and the well. In one embodiment, the abrupt junction is formed by a dobule implant process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.