Thin film device transfer method, thin film device, thin film integrated circuit device, active matrix board, liquid crystal display, and electronic apparatus
US6521511B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 26, 1999 |
| Grant date | Feb 18, 2003 |
| Priority date | — |
| Expiry date | Feb 26, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/68368
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin film device fabrication method in which a thin film device formed on a substrate are transferred to a primary destination-of-transfer part and then the thin film device is transferred to a secondary destination-of-transfer part. A first separation layer (120) made of such a material as amorphous silicon is provided on a substrate (100) which allows passage of laser. A thin film device (140) such as TFTs are formed on the substrate (100). Further, a second separation layer (160) such as a hot-melt adhesive layer is formed on the thin film devices (140), and a primary destination-of-transfer part (180) is mounted thereon. The bonding strength of the first separation layer is weakened by irradiation with light, and the substrate (100) is removed. Thus, the thin film device (140) is transferred to the primary destination-of-transfer part. Then, a secondary destination-of-transfer part (200) is attached onto the bottom of an exposed part of the thin film device (140) via an adhesive layer (190). Thereafter, the bonding strength of the second separation layer is weakened by such means as thermal fusion, and the primary destination-of-transfer part is removed. In this manner, the t…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.