Gamma-ray detector employing scintillators coupled to semiconductor drift photodetectors
US6521894B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 9, 1999 |
| Grant date | Feb 18, 2003 |
| Priority date | — |
| Expiry date | Nov 9, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01T1/2928
- WIPO fieldEnvironmental technology
- WIPO sectorChemistry
Abstract
Radiation detectors according to one embodiment of the invention are implemented using scintillators combined with a semiconductor drift photodetectors wherein the components are specifically constructed in terms of their geometry, dimensions, and arrangement so that the scintillator decay time and drift time in the photodetector pairs are matched in order to achieve a greater signal-to-noise ratio. The detectors may include electronics for amplification of electrical signals produced by the silicon drift photodetector, the amplification having a shaping time optimized with respect to the decay time of the scintillator and time spread of the signal in the silicon drift photodetector to substantially maximize the ratio of the signal to the electronic noise.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.