Solid-state image sensor
US6521925B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2000 |
| Grant date | Feb 18, 2003 |
| Priority date | — |
| Expiry date | Mar 30, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/14
Abstract
A solid-state image sensor comprises a photodiode which is provided in a p-type substrate or a p-type well and composed of a first n-type region for storing photoelectrically converted signal charges, a gate electrode provided above the substrate or well so as to be adjacent to one end of the photodiode, and a n-type drain provided at the surface of the substrate or well opposite to the photodiode, with the gate electrode interviewing therebetween. There is provided a second n-type region which is formed so as to be in contact with the upper part of the first n-type region on the gate electrode side and one end of which is formed to self-align with one end of the gate electrode to be part of the photodiode. This construction prevents the short-channel effect of the signal read transistor section and reduces or eradicates the left-over signal charges stored in the photodiode, thereby reducing noise and improving the sensitivity of the sensor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.