RF power transistor having low parasitic impedance input feed structure
US6521972B1 · kind B1 · utility
2Cited by
7References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 28, 2000 |
| Grant date | Feb 18, 2003 |
| Priority date | — |
| Expiry date | Sep 28, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An RF microwave power transistor has an input/output feed structure which functions as a low impedance microstrip line by providing a ground plane in close proximity to the feed structure on one surface of a semiconductor body. A second ground plane can be provided on an opposing surface of the semiconductor body with vias interconnecting the first and second ground planes. In addition to reducing feed impedance, a larger total transistor size can be provided before “odd mode oscillation” occurs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.