Method of crystallizing amorphous silicon layer and crystallizing apparatus thereof
US6524662B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jul 9, 1999 |
| Grant date | Feb 25, 2003 |
| Priority date | — |
| Expiry date | Jul 9, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/06
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention is related to a method of crystallizing an amorphous silicon layer and a crystallizing apparatus thereof which crystallize an amorphous silicon layer using of electric fields and plasma. The present invention includes the steps of depositing an inducing substance for silicon crystallization on an amorphous silicon layer by plasma exposure, and carrying out annealing on the amorphous silicon layer while applying an electric field to the amorphous silicon layer. The present invention includes a chamber having an inner space, a substrate support in the chamber wherein the substrate support supports a substrate, a plasma generating means in the chamber wherein the plasma generating means produces plasma inside the chamber, an electric field generating means in the chamber wherein the electric field generating means applies electric field to the substrate, and a heater at the substrate support wherein the heater supplies the substrate with heat.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.