Patent · US Expired

Solar cell and method for fabricating the same

US6524880B2 · kind B2 · utility

73Cited by
5References
15Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 25, 2001
Grant dateFeb 25, 2003
Priority date
Expiry dateJul 25, 2021

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02E10/50

Abstract

A technique for fabricating a solar cell includes an n+ emitter region first being formed on a front surface of the cell, and then front and rear insulating layers being formed on both sides of the cell. P (Phosphorus)-source and B (Boron)-source are printed on the front and rear insulating layers, respectively, and then both dopants are diffused into the cell at high temperature. Therefore, n++ region in the front side of the cell and BSF (back surface field) region in the rear side of the cell is formed. Front and rear contact patterns are formed on the front and rear insulating layers, respectively. The n++ region and BSF region are exposed after front and rear contacts are formed on the front and rear insulating layers, respectively. The front and rear contacts contact the n++ region and BSF region, respectively.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.