Method concerning a junction barrier Schottky diode, such a diode and use thereof
US6524900B2 · kind B2 · utility
63Cited by
1References
22Claims
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Assignee
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Key dates
| Filing date | Jul 25, 2001 |
| Grant date | Feb 25, 2003 |
| Priority date | — |
| Expiry date | Jul 25, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
Abstract
A method for controlling the temperature dependence of a junction barrier Schottky diode of a semiconductor material having an energy gap between the valence band and the conduction band exceeding 2 eV provides for doing this when producing the diode by adjusting the on-state resistance of the grid portion of the diode during the production for obtaining a temperature dependence of the operation of the diode adapted to the intended use thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.