Method of making an anti-reflection structure for a conductive layer in a semiconductor device
US6524945B2 · kind B2 · utility
1Cited by
1References
6Claims
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Key dates
| Filing date | Apr 26, 2002 |
| Grant date | Feb 25, 2003 |
| Priority date | — |
| Expiry date | Apr 26, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/952
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An anti-reflection structure formed on a gate electrode in a MOSFET device includes a first and second anti-reflection layers sandwiching therebetween a silicon nitride layer. Each of the anti-reflection layers has a two-layer structure including a silicon oxide nitride film and a protective silicon oxide film. The anti-reflection layer structure improves the accuracy of the pattern size for the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.