Method for incorporating nitrogen into a dielectric layer using a special precursor

US6524967B1 · kind B1 · utility

Assignee

• Motorola, Inc. · US

Inventor

• Prasad Alluri · Cameron Park, US

Key dates

• Filing date: Aug 1, 2000
• Grant date: Feb 25, 2003
• Expiry date: Dec 29, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/28568
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A metal-organic precursor suitable for use in a chemical vapor deposition formation of dielectric layer is disclosed. The precursor comprises a moiety that includes a first metal atom, an oxygen atom, and a nitrogen atom. The oxygen atom is chemically bonded to the metal atom and to the nitrogen atom. The first metal atom may be a Group III, Group IV, or Group V transition metals such as yttrium, lanthanum, titanium, zirconium, hafnium, niobium, and tantalum or another metal such as aluminum. The precursor may include one or more alkoxy groups bonded to the first metal atom. The precursor may be characterized as a M(OCR3)X−Y−Z(ONR2)Y(OSiR3)Z molecule where Y is an integer from 1 to (X−1), Z is an integer from 0 to X−1, X is an integer from 3 to 5 depending upon the valency of M and (Y+Z) is less than or equal to X. In one embodiment the precursor further includes one or more siloxy or alkyl siloxy groups bonded to the first metal atom. The precursor is suitable for chemical vapor deposition process used to deposit a dielectric layer on a semiconductor substrate. In this embodiment, the dielectric layer may be intended as a gate dielectric layer or a capacito…