Light emitting semiconductor devices including wafer bonded heterostructures

US6525335B1 · kind B1 · utility

Assignee

• Lumileds Lighting US, LLC · US

Inventors

• Michael R. Krames · Los Altos, US
• Christopher Kocot · Redwood City, US

Key dates

• Filing date: Nov 6, 2000
• Grant date: Feb 25, 2003
• Expiry date: Dec 4, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/825

Abstract

A method of forming a light emitting semiconductor device includes fabricating a stack of layers comprising an active region, and wafer bonding a structure including a carrier confinement semiconductor layer to the stack. A light emitting semiconductor device includes a first carrier confinement layer of a first semiconductor having a first conductivity type, an active region, and a wafer bonded interface disposed between the active region and the first carrier confinement layer. The light emitting semiconductor device may further include a second carrier confinement layer of a second semiconductor having a second conductivity type, with the active region disposed between the first carrier confinement layer and the second carrier confinement layer. The wafer bonded confinement layer provides enhanced carrier confinement and device performance.