Thin film transistor, liquid crystal display device and method of fabricating the thin film transistor
US6525341B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 20, 2000 |
| Grant date | Feb 25, 2003 |
| Priority date | — |
| Expiry date | Jul 20, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6746
Abstract
The present invention improves a productivity in growing an a-Si film in a thin film transistor and to obtain an excellent thin film transistor characteristic. More specifically, disclosed is a thin film transistor in which an amorphous silicon film 2, a gate insulating film 3 and a gate electrode are sequentially stacked on an insulating substrate 1. The amorphous silicon film 2 includes a low defect-density amorphous silicon layer 5 formed at a low deposition rate and a high deposition rate amorphous silicon layer 6 formed at a deposition rate higher than that of the low defect-density amorphous silicon layer 5. The low defect-density amorphous silicon layer 5 in the amorphous silicon film 2 is grown closer to the insulating substrate 1, and the high deposition rate amorphous silicon layer 6 is grown closer to the gate insulating film 3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.