Two terminal edge illuminated epilayer waveguide phototransistor
US6525348B1 · kind B1 · utility
Inventors
Key dates
| Filing date | Jul 17, 2001 |
| Grant date | Feb 25, 2003 |
| Priority date | — |
| Expiry date | Jul 17, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/548
Abstract
An edge illuminated epilayer waveguide phototransistor including a subcollector layer formed from an epitaxially grown quaternary semiconductor material, such as heavily doped InGaAsP. A collector region of undoped InGaAs is epitaxially grown on the subcollector layer. A base region of moderately doped InGaAs is epitaxially grown on the collector layer. An emitter region, including a doped InGaAsP layer, a doped InP layer, and a heavily doped InGaAs emitter contact layer, is epitaxially grown on the base layer. The various layers and regions are formed so as to define an edge-illuminated facet for receiving incident light. Also, the base does not have an ohmic contact so that the base thickness can be minimized. Finally, the base doping concentration is minimized so that the gain-bandwidth product can be maximized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.