Anti-reflection structure for a conductive layer in a semiconductor device
US6525353B1 · kind B1 · utility
0Cited by
6References
3Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 13, 2000 |
| Grant date | Feb 25, 2003 |
| Priority date | — |
| Expiry date | Dec 3, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/952
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An anti-reflection structure formed on a gate electrode in a MOSFET device includes a first and second anti-reflection layers sandwiching therebetween a silicon nitride layer. Each of the anti-reflection layers has a two-layer structure including a silicon oxide nitride film and a protective silicon oxide film. The anti-reflection layer structure improves the accuracy of the pattern size for the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.