Solid imaging device
US6525356B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 13, 1999 |
| Grant date | Feb 25, 2003 |
| Priority date | — |
| Expiry date | Dec 13, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/1536
Abstract
A frame transfer-type solid imaging device is provided, which can be operated without reducing the transfer efficiency or the transfer charge quantity.A plurality of N-type regions 5 constituting photoelectric conversion regions and a plurality of P+-type regions 6 constituting channel stop regions are formed on a P-type silicon substrate 4, and a transparent electrode 1 is further formed through an insulating film 7 on the substrate 4. The thickness of the transparent electrode at a portion above the photoelectric conversion region is made thinner than the thickness of the other part of the transparent electrode 1, and an antireflection film 8 is formed above the photoelectric conversion region 2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.