Biased ion beam deposition of high density carbon
US6526909B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 22, 2000 |
| Grant date | Mar 4, 2003 |
| Priority date | — |
| Expiry date | Mar 22, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3178
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A device for increasing the incident energy of an ion for coating a disc in an ion beam deposition process. The ion beam deposition process is performed in a chamber with the disc to be coated disposed therein. An ion source, having a voltage level, is introduced into the chamber for generating an ion beam for depositing ions on the disc. A bias contact is coupled to the disc and a power supply is coupled to the bias contact. The power supply applies a voltage level to the bias contact that is less than the voltage level of the ion source thereby creating a negative bias voltage between the disc and the ion source. This negative bias voltage causes the incident energy of the ion to increase. As a result, the optimal incident energy can be achieved using a lower original energy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.