Patent · US Expired

Silica-based optical device fabrication

US6528338B2 · kind B2 · utility

3Cited by
13References
26Claims
0Family size

Assignee

Inventor

Key dates

Filing dateJul 25, 2001
Grant dateMar 4, 2003
Priority date
Expiry dateJul 25, 2021

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG02B2006/12116
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

The present invention provides a method of manufacturing a polarization-insensitive waveguide structure. The method comprises: depositing a buffer layer on a substrate; depositing a core layer on the buffer layer and etching the core layer so as to form a waveguide core; and depositing a silica-based cladding layer over the core by means of plasma-enhanced chemical vapor deposition (PECVD) in the absence of nitrogen or nitrogen-containing gases so as to complete the waveguide structure, wherein the cladding layer is deposited in a manner which substantially prevents polarization sensitivity in the waveguide structure. The cladding layer can be deposited with an intrinsic stress which cancels out any thermal stresses. The stress can be controlled by controlling the PECVD deposition conditions, such as power and ion bombardment.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.