Protection of tungsten alignment mark for FeRAM processing

US6528386B1 · kind B1 · utility

Assignee

• TEXAS INSTRUMENTS INCORPORATED · US

Inventors

• Scott R. Summerfelt · Dallas, US
• Luigi Colombo · Dallas, US
• Stephen Roy Gilbert · San Francisco, US
• Theodore S. Moise · Dallas, US
• Sanjeev Aggarwal · Scottsdale, US

Key dates

• Filing date: Mar 13, 2002
• Grant date: Mar 4, 2003
• Expiry date: Mar 13, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B53/30

Abstract

A method of fabricating a ferroelectric capacitor is disclosed. The method comprises the patterning of a top electrode layer and a dielectric layer to form a capacitor stack structure having sidewalls associated therewith. Prior to patterning the bottom electrode layer, a protective film is formed on the sidewalls of the capacitor stack structure in order to protect the dielectric material from conductive contaminants associated with a subsequent patterning of the bottom electrode layer.