Method and apparatus for low energy ion implantation
US6528804B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 13, 2000 |
| Grant date | Mar 4, 2003 |
| Priority date | — |
| Expiry date | Mar 13, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/0475
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An ion implanter for low energy ion implantation includes an ion beam generator, a older for supporting a workpiece, such as a semiconductor wafer, and a voltage source electrically connected to the workpiece. The ion beam generator includes an ion source for generating ions and an extraction electrode having an extraction voltage applied thereto for accelerating the ions to form an ion beam. The voltage source applies to the workpiece a bias voltage that is of opposite polarity and smaller magnitude than the extraction voltage. The ions in the ion beam are implanted in the workpiece with an energy that is a function of the difference between the extraction voltage and the bias voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.