Write-once read-many electrical memory element of a conjugated polymer or oligomer
US6528815B1 · kind B1 · utility
50Cited by
4References
7Claims
0Family size
Inventors
Key dates
| Filing date | Feb 12, 1997 |
| Grant date | Mar 4, 2003 |
| Priority date | — |
| Expiry date | Sep 25, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/1135
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The invention relates to a write-once read-many memory element (1), or an assembly thereof, which comprises a substrate on which electrodes are provided and between which a layer is sandwiched, which memory element includes a conjugated polymer or oligomer as well as a dopant. This memory element can be written by temporarily applying a sufficiently high voltage to the electrodes so that the electroconductivity of the layer is permanently reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.