Shapes-based migration of aluminum designs to copper damascene
US6528883B1 · kind B1 · utility
21Cited by
23References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 26, 2000 |
| Grant date | Mar 4, 2003 |
| Priority date | — |
| Expiry date | Jan 5, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An interconnect structure for use in semiconductor devices which interconnects a plurality of dissimilar metal wiring layers, which are connected vias, by incorporating shaped voids in the metal layers. The invention also discloses a method by which such structures are constructed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.