Surface emitting semiconductor laser
US6529541B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 20, 2000 |
| Grant date | Mar 4, 2003 |
| Priority date | — |
| Expiry date | Apr 18, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/166
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A surface emitting semiconductor laser that is easy to manufacture and has a high-intensity fundamental lateral mode optical output power. The surface emitting semiconductor laser has a semiconductor substrate on which are sequentially laminated a lower n-type DBR layer, an active layer region, an upper p-type DBR layer, a p-side electrode that is an upper layer of the upper n-type DBR layer and functions as an upper electrode provided with an aperture that forms an emission region for a laser beam, and a current confinement portion formed by oxidization. On the basis of the reflectance of a cavity in a region corresponding to the p-side electrode, a metal aperture diameter (Wmetal) of the aperture and a diameter (Woxide) of the current confinement portion are determined such that the difference between an optical loss of a cavity in a higher-order lateral mode of a laser beam and an optical loss of a cavity in a fundamental lateral mode of a laser beam becomes larger.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.