Low temperature, high quality silicon dioxide thin films deposited using tetramethylsilane (TMS) for stress control and coverage applications

US6531193B2 · kind B2 · utility

Assignee

• The Penn State Research Foundation · US

Inventors

• Stephen J. Fonash · State College, US
• Xin Lin · State College, US
• Douglas M. Reber · Austin, US

Key dates

• Filing date: Dec 11, 2000
• Grant date: Mar 11, 2003
• Expiry date: Dec 11, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02274
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Silicon dioxide thin film have been deposited at temperatures from 25° C. to 250° C. by plasma enhanced chemical vapor deposition (PECVD) using tetramethylsilane (TMS) as the silicon containing precursor. At these temperatures, the PETMS oxide films have been found to exhibit adjustable stress and adjustable conformality. Post deposition annealing in forming gas at or below the deposition temperatures has been shown to be very effective in improving the PETMS oxide properties while preserving the low temperature aspect of the PETMS oxides.