Packaging of light-emitting diode
US6531328B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 11, 2001 |
| Grant date | Mar 11, 2003 |
| Priority date | — |
| Expiry date | Oct 11, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8581
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention of “Packaging of Light-Emitting Diode” is mainly to use silicon wafer as the substrate, whose crystal surface has a specific orientation for etching to form grooves. On the back of silicon substrate, dry etching is used for through-hole electrodes. Meanwhile, the insulating oxide layer or the nitride layer on silicon surface is plated with a reflective layer and an electrode layer, so the LED substrate is actually made of “silicon substrate”. Through the procedures including placement of LED chips in the grooves of a silicon substrate, die bonding, wire bonding, encapsulation and cutting, SMD LED can be formed. Compared to traditional LED packaging that uses circuit boards or metal leadframes as main packaging substrates, the present invention is a breakthrough, which uses silicon wafers as substrates, so it has several advantages including good heat dissipation, high heat resistance and easy miniaturization, which are not seen in common LED presently.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.