Method for crystallizing amorphous silicon and fabricating thin film transistor using crystallized silicon
US6531348B2 · kind B2 · utility
6Cited by
6References
19Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 4, 2001 |
| Grant date | Mar 11, 2003 |
| Priority date | — |
| Expiry date | Dec 4, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0229
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of crystallizing amorphous silicon includes forming an amorphous silicon layer over a substrate, forming a plurality of metal clusters on the amorphous silicon layer, and simultaneously applying a thermal treatment, an electric field, and a magnetic field to crystallize the amorphous silicon layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.