Patent · US Expired

Lanthanum oxide-based gate dielectrics for integrated circuit field effect transistors

US6531354B2 · kind B2 · utility

90Cited by
5References
34Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 17, 2001
Grant dateMar 11, 2003
Priority date—
Expiry dateJan 17, 2021

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D1/684
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Lanthanum oxide-based gate dielectrics are provided for integrated circuit field effect transistors. The gate dielectrics may include lanthanum oxide, preferably amorphous lanthanum oxide and/or an alloy of lanthanum oxide and silicon oxide, such as lanthanum silicate (La2SiO5). Lanthanum oxide-based gate dielectrics may be fabricated by evaporating lanthanum on a silicon surface of an integrated circuit substrate. The lanthanum may be evaporated in the presence of oxygen. Lanthanum and silicon may be co-evaporated. An anneal then may be performed. Lanthanum oxide-based dielectrics also may be used for integrated circuit capacitors.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.