Method of oxidizing strain-compensated superlattice of group III-V semiconductor
US6531414B1 · kind B1 · utility
4Cited by
16References
18Claims
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Key dates
| Filing date | May 2, 2000 |
| Grant date | Mar 11, 2003 |
| Priority date | — |
| Expiry date | May 2, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a native oxide from at least one strain-compensated superlattice of Group III-V semiconductor material, where each at least one superlattice includes two monolayers of a Group III-V semiconductor material and at least two monolayers of an aluminum-bearing Group III-V semiconductor material. The method entails exposing each at least one superlattice to a water-containing environment and a temperature of at least about 425 degrees Celsius to convert at least a portion of said superlattice to a native oxide. The native oxide thus formed is useful in electrical and optoelectrical devices, such as lasers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.