Very low voltage actuated thyristor with centrally-located offset buried region
US6531717B1 · kind B1 · utility
4Cited by
47References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 15, 2000 |
| Grant date | Mar 11, 2003 |
| Priority date | — |
| Expiry date | Feb 15, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/713
Abstract
A semiconductor thyristor device that incorporates buried regions centrally located on the chip with respect to the other semiconductor regions. By centering an upper and lower buried region, larger-area contacts can be realized, thereby increasing the current capability of the device. In order to achieve low breakover voltage devices, the buried regions are offset laterally with respect to the respective emitter regions. The low voltage thyristor devices can be incorporated into five-pin protection modules for protecting customer circuits.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.