Radiation-hardened silicon-on-insulator CMOS device, and method of making the same

US6531739B2 · kind B2 · utility

Assignee

• Peregrine Semiconductor Corporation · US

Inventors

• James S. Cable · Del Mar, US
• Eugene F. Lyons · Santee, US
• Michael A. Stuber · Carlsbad, US
• Mark L. Burgener · San Diego, US

Key dates

• Filing date: Apr 5, 2001
• Grant date: Mar 11, 2003
• Expiry date: Apr 5, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/201

Abstract

A method for eliminating the radiation-induced off-state current in the P-channel ultrathin silicon-on-sapphire transistor, by providing a retrograde dopant concentration profile that has the effect of moving the Fermi level at the back of the device away from that part of the bandgap where the interface states are located. When the Fermi level does not swing through this area in any region of operation of the device, subthreshold stretchout of the I-V curves does not occur.