Heterojunction bipolar transistor optoelectronic transimpedance amplifier using the first transistor as an optical detector
US6531925B2 · kind B2 · utility
Inventors
Key dates
| Filing date | Jul 17, 2001 |
| Grant date | Mar 11, 2003 |
| Priority date | — |
| Expiry date | Jul 17, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F3/08
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A monolithically integrated heterojunction bipolar transistor optoelectronic transimpedance amplifier using the first transistor as an optical detector. An edge illuminated epilayer waveguide phototransistor is used as the light-detecting element. The phototransistor is used as an optical detector in which the incident light pulses are converted to electrical pulses and then amplified for further signal processing. The phototransistor is monolithically integrated on the same material substrate as the emitter follower amplifier so that the parasitics normally associated with receiver circuitry are minimized. By eliminating the parasitic impedances, the circuit can be used as a receiver in high bit rate optical communication systems.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.