Method and system for improving a transistor model
US6532438B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 30, 1998 |
| Grant date | Mar 11, 2003 |
| Priority date | — |
| Expiry date | Nov 30, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F30/367
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An improved system for simulating bipolar transistors with a variation in Early voltage as a function of collector/emitter bias voltage is disclosed. The simulation is based upon a standard Gummel-Poon model and is improved by an Early voltage extension, where the constant Early voltage is replaced by an Early voltage that is divided into several regions. The Early voltage is adjusted to fit the actual variations of the measured Early voltage characteristics of a bipolar transistor. The Early voltage within each region is used for calculating the bipolar transistors base charge which then is used to simulate the performance of the bipolar transistor. The regions may be linked together by choice of boundary conditions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.