Scanning evanescent electro-magnetic microscope
US6532806B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 23, 2000 |
| Grant date | Mar 18, 2003 |
| Priority date | — |
| Expiry date | Oct 23, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/869
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A novel scanning microscope is described that uses near-field evanescent electromagnetic waves to probe sample properties. The novel microscope is capable of high resolution imaging and quantitative measurements of the electrical properties of the sample. The inventive scanning evanescent wave electromagnetic microscope (SEMM) can map dielectric constant, tangent loss, conductivity, complex electrical impedance, and other electrical parameters of materials. The quantitative map corresponds to the imaged detail. The novel microscope can be used to measure electrical properties of both dielectric and electrically conducting materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.