Method for sputtering tini shape-memory alloys
US6533905B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jan 24, 2001 |
| Grant date | Mar 18, 2003 |
| Priority date | — |
| Expiry date | Jan 24, 2021 |
Classification
- Technology area (CPC A)Human Necessities
- CPC primaryA61F2002/9155
- WIPO fieldMedical technology
- WIPO sectorInstruments
Abstract
A thin film device, such as an intravascular stent, is disclosed. The device is formed of a seamless expanse of thin-film (i) formed of a sputtered nitinol shape memory alloy, defining, in an austenitic state, an open, interior volume, having a thickness between 0.5-50 microns, having an austenite finish temperature Af below 37° C.; and demonstrating a stress/strain recovery greater than 3% at 37° C. The expanse can be deformed into a substantially compacted configuration in a martensitic state, and assumes, in its austenitic state, a shape defining such open, interior volume. Also disclosed is a sputtering method for forming the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.