Surface plasmon enhanced light emitting diode and method of operation for the same
US6534798B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 6, 2000 |
| Grant date | Mar 18, 2003 |
| Priority date | — |
| Expiry date | Oct 21, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/00
Abstract
The emission properties of light-emitting diodes are enhanced by coupling to surface plasmons. The semiconductor emitter layer of the light-emitting diode is thinner than &lgr;/2 and is sandwiched between two metal films. A periodic pattern is defined in the top semitransparent metal layer by lithography with the result that it efficiently couples out the light emitted from the semiconductor and simultaneously enhances the spontaneous emission rate. Extraction efficiencies of up to 35% and Purcell factors of up to 4.5 are obtainable. Photoluminescence intensities of up to 46 times higher in fabricated structures compared to unprocessed wafers are obtained. The increased light emission is due to an increase in the efficiency and an increase in the pumping intensity resulting from trapping of pump photons within the microcavity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.