High Q inductor with faraday shield and dielectric well buried in substrate
US6534843B2 · kind B2 · utility
18Cited by
23References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 10, 2001 |
| Grant date | Mar 18, 2003 |
| Priority date | — |
| Expiry date | Feb 10, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F27/36
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Inductor losses to a semiconducting substrate are eliminated in an IC structure by etching a well into the substrate down to the insulating layer coating the substrate and fabricating a grounded Faraday shield in the shape of elongated segments in the bottom of the well. The well lies directly below the inductor and is optionally filled with cured low-k organic dielectric or air.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.