High performance integrated circuit devices adaptable to use lower supply voltages with smaller device geometries

US6535034B1 · kind B1 · utility

Assignee

• Programmable Silicon Solutions · US

Inventor

• Ting-Wah Wong · Cupertino, US

Key dates

• Filing date: Jul 30, 1997
• Grant date: Mar 18, 2003
• Expiry date: Jul 30, 2017

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/859

Abstract

A high performance integrated circuit device enables scaled low voltage transistors to be utilized as transfer gates with improved speed characteristics. At least some of the transistors are formed with thicker gate oxides and boosted positive and negative drive voltages are used with the thicker gate oxide transistors. The transfer gates may be driven by an inverter using a transistor formed in a triple well.