Patent · US Expired

Hybrid power MOSFET for high current-carrying capacity

US6535050B2 · kind B2 · utility

16Cited by

1References

7Claims

0Family size

Assignee

Siemens Aktiengesellschaft · DE

Inventors

Eric Baudelot · Weisendorf, DE
Manfred Bruckmann · Wendelstein, DE
Heinz Mitlehner · Uttenreuth, DE
Benno Weis · Hemhofen, DE

Key dates

Filing date	Jul 23, 2001
Grant date	Mar 18, 2003
Priority date	—
Expiry date	Apr 12, 2022

Classification

Technology area (CPC H)Electricity
CPC primaryH03F1/226
WIPO fieldBasic communication processes
WIPO sectorElectrical engineering

Abstract

A hybrid power MOSFET having a low blocking-capability MOSFET and a high blocking-capability junction FET is disclosed. In accordance with the present invention, this cascode circuit has at least two high blocking-capability junction FETs which are electrically connected in parallel and whose gate connections are respectively electrically conductively connected to the source connection of the low blocking-capability MOSFET by means of a connecting line. Thus, a hybrid power MOSFET for a high current-carrying capacity is obtained whose design technology has been considerably simplified on account of the use of only one control line and n+1 chips.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.