Magnetic tunneling structure having ferromagnetic layers of different crystallographic structure
US6535365B1 · kind B1 · utility
16Cited by
8References
36Claims
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Key dates
| Filing date | Feb 17, 2000 |
| Grant date | Mar 18, 2003 |
| Priority date | — |
| Expiry date | Feb 17, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/935
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A magnetic tunneling structure formed of first and second ferromagnetic layers and a insulating tunneling barrier layer sandwiched therebetween. The first and second ferromagnetic layers are preferably formed of the same ferromagnetic material, but have different crystallographic structures. The insulating tunneling barrier layer is preferably a nitride layer, for example, boron nitride, formed on the first ferromagnetic layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.