Sense amplifier circuit and method for nonvolatile memory devices
US6535426B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 2, 2001 |
| Grant date | Mar 18, 2003 |
| Priority date | — |
| Expiry date | Aug 2, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2207/063
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A sense amplifier circuit and method are disclosed for nonvolatile memory devices, such as flash memory devices. The sense amplifier circuit includes a current source that is configurable to source any of at least two nonzero current levels in the sense amplifier circuit. The sense amplifier circuit is controlled by control circuitry in the nonvolatile memory device so that each sense amplifier circuit sources a first current level during the precharge cycle of a memory read operation, and a second current level, greater than the first current level, during the memory cell sense operation. In this way, the sense amplifier circuit consumes less power during the memory read operation without an appreciable loss in performance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.