System and method for improving thin films by gas cluster ion beam processing
US6537606B2 · kind B2 · utility
31Cited by
3References
40Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 10, 2001 |
| Grant date | Mar 25, 2003 |
| Priority date | — |
| Expiry date | Jul 10, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/336
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides apparatus and methods to carry out the task of both reducing the surface roughness (smoothing) and improving the thickness uniformity of, preferably, but not limited thereto, the top silicon film of a silicon-on-insulator (SOI) wafer or similar thin-film electronic and photonic materials (workpiece). It also provides a method and apparatus for smoothing the surface of a (preferably) SOI wafer (workpiece) and for making the surface of the silicon film of a (preferably) SOI wafer cleaner and more free from contaminants.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.